On-Chip Sensing of Thermoelectric Thin Film's Merit
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Authors
Xiao, Zhigang
Zhu, Xiaoshan
Issue Date
2015
Type
Article
Language
en_US
Keywords
silicon diode temperature sensors , thermoelectric thin films and devices , Sb2Te3 thin film , microfabrication
Alternative Title
Abstract
Thermoelectric thin films have been widely explored for thermal-to-electrical energy conversion or solid-state cooling, because they can remove heat from integrated circuit (IC) chips or micro-electromechanical systems (MEMS) devices without involving any moving mechanical parts. In this paper, we report using silicon diode-based temperature sensors and specific thermoelectric devices to characterize the merit of thermoelectric thin films. The silicon diode temperature sensors and thermoelectric devices were fabricated using microfabrication techniques. Specifically, e-beam evaporation was used to grow the thermoelectric thin film of Sb2Te3 (100 nm thick). The Seebeck coefficient and the merit of the Sb2Te3 thin film were measured or determined. The fabrication of silicon diode temperature sensors and thermoelectric devices are compatible with the integrated circuit fabrication.
Description
Citation
Xiao, Z., & Zhu, X. (2015). On-Chip Sensing of Thermoelectric Thin Film's Merit. Sensors, 15(7), 17232�"17240. doi:10.3390/s150717232
Publisher
Sensors
License
Attribution 4.0 International
Journal
Volume
Issue
PubMed ID
ISSN
1424-8220