Atomic structure and mechanical response of coincident stacking faults in boron suboxide
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Authors
Reddy, Kolan M.
Liu, Pan
Shen, Yidi
Goto, Takeshi
An, Qi
Chen, Mingwei
Issue Date
2019
Type
Article
Language
en_US
Keywords
Boron suboxide , shear amorphization , stacking fault , transmission electron microscopy , mechanical behavior
Alternative Title
Abstract
We report the atomic structure of coincident stacking faults (SFs) in superhard boron suboxide (B6O) by combining annular bright field scanning transmission electron microscopy and quantum mechanics (QM) simulations. Different from simple SFs, which only lead to the symmetry breaking, the coincident SF junctions in the complex B6O result in local chemical configuration changes by forming an abnormal three-oxygen-atoms chain linking boron icosahedra, instead of the regular two-oxygen-atoms chain in a perfect B6O crystal. QM studies demonstrate that coincident SFs lead to the decreased shear strength under pure shear and indentation conditions and are responsible to the initial failure and amorphization of B6O. [GRAPHICS] IMPACT STATEMENT Combining ABF-STEM and MD simulations, we demonstrated that the coincident SFs lead to the decrease of shear strength and are responsible for the initial failure and amorphization of B6O.
Description
Citation
Madhav Reddy, K., Liu, P., Shen, Y., Goto, T., An, Q., & Chen, M. W. (2018). Atomic structure and mechanical response of coincident stacking faults in boron suboxide. Materials Research Letters, 7(2), 75�"81. doi:10.1080/21663831.2018.1556184
Publisher
Materials Research Letters
License
Attribution 4.0 International
Journal
Volume
Issue
PubMed ID
ISSN
2166-3831